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H. Krawczynski, D. J. Leopold, J. S. Perkins, P. Dowkontt (Washington University in St. Louis)
During the last decade, the II-VI semiconductor Cadmium Zinc Telluride (CZT) has emerged as the most promising wide bandgap semiconductor for spatially and spectroscopically resolved detection of X-rays and gamma-rays from several keV up to about 1 MeV. A considerable number of approved and proposed NASA X-ray and gamma-ray missions use CZT as focal plane detectors. In this contribution, we present the optimization of pixelated (2.5 mm pitch), 0.5 cm thick CZT detectors that aims at improving on the detectors' energy resolutions and photopeak efficiencies. More specifically, our work focusses on (i) the evaluation of a large number of contact materials and contact deposition processes; (ii) the development of processing techniques that will reduce the surface currents between the anode pixels and the "steering grid" on the anode side; (iii) the development of a comprehensive simulation model of CZT detectors.
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Bulletin of the American Astronomical Society,
© 2003. The American Astronomical Soceity.